• DocumentCode
    2428181
  • Title

    Extending the viability of IDDQ testing in the deep submicron era

  • Author

    Tsiatouhas, Y. ; Haniotakis, Th ; Nicolos, D. ; Arapoyanni, A.

  • Author_Institution
    Adv. Silicon Solutions Div., ISD S.A., Athens, Greece
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    100
  • Lastpage
    105
  • Abstract
    IDDQ testing has become a widely accepted defect detection technique in CMOS ICs. However, its effectiveness in deep submicron is threatened by the increased transistor sub-threshold leakage current. In this paper, a new IDDQ testing scheme is proposed. This scheme is based on the elimination, during IDDQ testing, of the normal leakage current from the sensing node of the circuit under test so that already known in the open literature IDDQ sensing techniques can be applied in deep submicron.
  • Keywords
    CMOS integrated circuits; fault location; integrated circuit testing; leakage currents; CMOS ICs; IDDQ testing scheme; IDDQ testing viability extension; defect detection technique; normal leakage current elimination; sensing node; transistor sub-threshold leakage current; CMOS technology; Circuit testing; Current measurement; Informatics; Leakage current; Power supplies; Silicon; Telecommunication computing; Temperature dependence; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2002. Proceedings. International Symposium on
  • Print_ISBN
    0-7695-1561-4
  • Type

    conf

  • DOI
    10.1109/ISQED.2002.996706
  • Filename
    996706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2428181