A continuous-time voltage readout for SiC micromechanical capacitive pressure sensor

Author

Zheng, Baixiang ; Tang, Wei ; Che, Zhe ; Zhang, Haixia

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China

fYear

2010

fDate

20-23 Jan. 2010

Firstpage

748

Lastpage

751

Abstract

This paper presents a CMOS capacitive sensing amplifier for a SiC MEMS capacitive pressure sensor. Noise performance and noise optimization studied from a theoretical point of view. This amplifier is a differential difference amplifier (DDA) with optimal transistor sizing to minimize sensor noise floor. The simulation result shows that the circuit can obtain a stable and linear voltage, and Continuous-Time Voltage is an ideal choice compared to other method for sensing ultra-small capacitance change of the MEMS sensors.

Keywords

CMOS analogue integrated circuits; capacitive sensors; differential amplifiers; integrated circuit noise; microsensors; pressure sensors; readout electronics; CMOS capacitive sensing amplifier; MEMS capacitive pressure sensor; SiC; continuous-time voltage readout; differential difference amplifier; micromechanical capacitive pressure sensor; noise optimization; noise performance; optimal transistor sizing; sensor noise floor; Capacitive Pressure Sensor; Capacitive Sensing Amplifier; Continuous-Time Voltage; Micro-Electro-Mechanical Systems (MEMS);

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on

Conference_Location

Xiamen

Print_ISBN

978-1-4244-6543-9

Type

conf

DOI

10.1109/NEMS.2010.5592264

Filename

5592264