Contactless measurement of recombination lifetime in photovoltaic materials

Author

Ahrenkiel, R.K. ; Johnston, Steven

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

119

Lastpage

122

Abstract

Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work shows that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less

Keywords

UHF measurement; carrier lifetime; elemental semiconductors; photoconductivity; silicon; surface recombination; Si; UHF region; contactless measurement; lifetime resolution; photovoltaic materials; radio frequency photoconductive decay; recombination lifetime; semiconductor technology; silicon ingots; submicron thin films; system response; ultra-high frequency region; Current measurement; Photoconductivity; Photovoltaic systems; Radiative recombination; Radio frequency; Semiconductor thin films; Silicon; Size measurement; Solar power generation; UHF measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.653939

Filename

653939