The Radiation Enhanced Diffusion (RED) Diode realization of a large area p+p-n-n+ structure with high SOA

In this paper, we introduce a fully functional high voltage (V_rrm = 4.5 kV) and high current (I_FM= 7 kA) p⁺p^-n^-n⁺ diode based on radiation enhanced diffusion (RED) technology. The RED-Diode employs a low-doped p-layer buried at ap100 mum to increase the dynamic avalanche ruggedness for high SOA capability. The diode was processed on a 100 mm wafer and can safely turn off 4 and 7 kA @ 140degC @ 1500 A/mus for the diameters of 51 and 91 mm, resp. The RED of Pd was also extended from He to H irradiation. Compared to the reference diode without the buried p-layer, the RED diode has equal leakage, equal SOA capability under free-wheeling conditions, similar softness, 30% and 50% higher SOA for 51 and 91 mm diodes resp. with di/dt towards 10 kA/mus. Clamp-less operation is presented up to 1300 A with peak power above 15 MW at 125degC for the 91 mm diodes. For clamping diode application, this ruggedness can be further improved.