• DocumentCode
    2429703
  • Title

    Comparison of high power IGBTs and hard driven GTOs for high power inverters

  • Author

    Bernet, S. ; Teichmann, R. ; Zuckerberger, A. ; Steimer, P.

  • Author_Institution
    ABB Corp. Res., Heidelberg, Germany
  • Volume
    2
  • fYear
    1998
  • fDate
    15-19 Feb 1998
  • Firstpage
    711
  • Abstract
    The paper compares hard driven GTOs (IGCTs) and high power IGBT modules in a two level PWM inverter. The structure, fundamental operation, and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCTs and IGBTs in a 1.14 MVA inverter at switching frequencies of fs=250 Hz/500 Hz. The evaluation of device characteristics is the basis for a derivation of potential applications
  • Keywords
    PWM invertors; commutation; insulated gate bipolar transistors; losses; switching circuits; thyristor convertors; 1.14 MVA; 250 Hz; 500 Hz; commutated thyristors; fundamental operation; hard driven GTO; high power IGBT; high power inverters; loss comparison; structure; switching frequencies; two level PWM inverter; Aluminum; Insulated gate bipolar transistors; Power semiconductor switches; Protection; Pulse width modulation inverters; Semiconductor diodes; Silicon; Switching frequency; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 1998. APEC '98. Conference Proceedings 1998., Thirteenth Annual
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    0-7803-4340-9
  • Type

    conf

  • DOI
    10.1109/APEC.1998.653976
  • Filename
    653976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2429703