DocumentCode
2429942
Title
Fundamental scaling laws of DRAM dielectrics
Author
Reisinger, H. ; Stengl, R.
Author_Institution
Infineon Technol. Corp. Res., Munchen, Germany
fYear
2000
fDate
2000
Abstract
Dynamic random access memories (DRAM) demand an ever increasing density of storage capacitors. We show that increasing the dielectric constant K of the capacitor dielectric will not help to meet future requirements. This is because the amount of charge stored on a given area has an upper physical limit. In fact if the scaling of DRAM feature sizes and supply voltages will follow the SIA roadmap, a maximum K-value of 500 to 1000 must not be exceeded for future DRAM generations
Keywords
DRAM chips; MOS capacitors; dielectric thin films; permittivity; DRAM dielectrics; DRAM feature sizes; capacitor dielectric; dielectric constant; dynamic RAM; fundamental scaling laws; random access memories; storage capacitors; supply voltages; Capacitance; Capacitors; DRAM chips; Dielectric constant; Dielectric materials; Equations; Leakage current; Material properties; Random access memory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location
Cancun
Print_ISBN
0-7803-5766-3
Type
conf
DOI
10.1109/ICCDCS.2000.869832
Filename
869832
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