Experimental demonstration of a vertical LOCOS Insulated Base Transistor

Author

Sweet, Mark ; Narayanan, E. M Sankara ; Moens, Peter ; Desoete, Bart ; Vershinin, Konstantin ; Yip, Li Juin

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

fYear

2009

fDate

14-18 June 2009

Firstpage

235

Lastpage

238

Abstract

In this paper we demonstrate, for the first time, electrical results of vertical LOCOS based Insulated Base Transistors (IBT) fabricated in a 85 V BiCMOS process. Experimental results show that the devices exhibit dasiatransistor likepsila characteristics and show enhancements with respect to saturation current level when compared to MOSFET equivalents. Furthermore, a cathode cell structure with a MOSFET in parallel to the IBT displays superior performance when compared to devices where this is eliminated.

Keywords

BiCMOS integrated circuits; MOSFET; bipolar transistors; cathodes; BiCMOS process; MOSFET equivalents; cathode cell structure; saturation current level; vertical LOCOS insulated base transistor; voltage 85 V; BiCMOS integrated circuits; Breakdown voltage; Cathodes; Dielectrics and electrical insulation; Equivalent circuits; Insulated gate bipolar transistors; Integrated circuit technology; MOSFET circuits; Silicon on insulator technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5158045

Filename

5158045