Monte Carlo calculations of amplification spectrum for GaN THz transit-time resonance maser

Author

Starikov, E. ; Shiktorov, P. ; Gruzinskis, V. ; Reggiani, L. ; Varani, L. ; Vaissiere, J.C. ; Zhao, J.H.

Author_Institution

Semicond. Phys. Inst., Vilnius, Lithuania

fYear

2000

fDate

22-25 May 2000

Firstpage

17

Lastpage

18

Abstract

The aim of this work is to calculate the amplification band and the maximum gain for an optical phonon transit-time resonance (OPTTR) maser based on bulk zincblende and wurtzite GaN. For this sake the response function of the longitudinal velocity in the time domain representation is obtained by an extended averaging over the before- and after-scattering ensembles during Monte Carlo simulations. Then the differential mobility spectrum is calculated by Fourier transformation. In the frequency region of dynamic negative differential mobility (DNDM), the gain is determined and we investigate its dependence on frequency, applied electric field, lattice temperature, and doping level.

Keywords

III-V semiconductors; Monte Carlo methods; gallium compounds; masers; transit time devices; wide band gap semiconductors; Fourier transform; GaN; Monte Carlo simulation; amplification spectrum; dynamic negative differential mobility; gain; gallium nitride; optical phonon transit-time resonance maser; response function; tunable terahertz radiation source; wurtzite phase; zincblende phase; Doping; Frequency; Gallium nitride; Lattices; Masers; Monte Carlo methods; Phonons; Resonance; Stimulated emission; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on

Conference_Location

Glasgow, UK

Print_ISBN

0-85261-704-6

Type

conf

DOI

10.1109/IWCE.2000.869899

Filename

869899