Establishing an accurate numerical model for the 2D-simulation of buried contact cells [solar cells]

Author

Altermatt, Pietro P. ; Heiser, Gernot ; Kiesewetter, T. ; McIntosh, Keith R. ; Honsberg, Christiana B. ; Wenham, Stuart R. ; Green, Martin A.

Author_Institution

Photovoltaics Special Res. Centre, Univ. of New South Wales, NSW, Australia

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

179

Lastpage

182

Abstract

An accurate numerical model is established for the simulation of buried contact solar cells in two dimensions. The physical parameters and the approximations are discussed as well as the procedures that lead to the foundations of the model. The model is applied to bifacial solar cells with three different rear surface configurations: passivated by a thermally grown oxide (A); by a dopand-induced floating junction (B); and with a contacted junction (C). Especially when the cell is situated in a light-concentrating roof tile, configuration C performed far better than A and B. The two-dimensional effects of resistive losses in the semiconductor region of the solar cell are also discussed

Keywords

numerical analysis; semiconductor device models; solar cells; 2-D numerical model; approximations; bifacial solar cells; buried contact solar cells; light-concentrating roof tile; physical parameters; rear surface configuration; resistive losses; semiconductor region; Charge carrier processes; Computer science; Conductivity measurement; Numerical models; Photonic band gap; Photovoltaic cells; Radiative recombination; Semiconductor device modeling; Semiconductor process modeling; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654058

Filename

654058