DocumentCode
2431823
Title
Influence of electron-electron interaction on electron distributions in short Si MOSFETs analysed using the local iterative Monte Carlo technique
Author
Mietzner, T. ; Jakumeit, J. ; Ravaioli, U.
Author_Institution
II. Phys. Inst., Koln Univ., Germany
fYear
2000
fDate
22-25 May 2000
Firstpage
68
Lastpage
69
Abstract
The effects of electron-electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) are studied using the local iterative Monte Carlo technique (LIMO technique). This work demonstrates that electron-electron scattering can be efficiently treated within this technique.
Keywords
MOSFET; Monte Carlo methods; digital simulation; elemental semiconductors; iterative methods; semiconductor device models; silicon; LIMO technique; Si; electron distributions; electron-electron interaction; local iterative Monte Carlo technique; n-channel metal-oxide-semiconductor field effect transistors; short MOSFETs; Charge carrier processes; Electrons; FETs; Information technology; Iterative algorithms; Mie scattering; Monte Carlo methods; Particle scattering; Scientific computing; Silicon devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869926
Filename
869926
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