Quantum transport with the generalized Monte Carlo approach: the effect of non-diagonal injection

The need for quantum approaches in dealing with modern semiconductor devices has been proven by several authors. Recently we have proposed a Generalized Monte Carlo scheme that allow us for a proper description of the strong coupling between phase coherence and relaxation. Within our theoretical approach realistic quantum devices can be simulated: including their coupling to the outside environment. The approach is based on a Monte Carlo solution of the Semiconductor Bloch Equation (SBE) for open systems applied to realistic devices, where electrical contacts to the outside environment are treated explicitly.