DocumentCode
2432560
Title
Growth of CuIn3Se5 layer on the CuInSe2 film and its effect on the photovoltaic properties of In2 Se3/CuInSe2 solar cells
Author
Kwon, Se Han ; Park, Sung Chan ; Ahn, Byung Tae ; Yoon, Kyung Hoton ; Song, Jinsoo
Author_Institution
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
395
Lastpage
398
Abstract
The growth of CuIn3Se5 layer on CuInSe2 films has been studied for the fabrication of CuInSe2 solar cell, using the three-stage process. After growing the CuInSe2 film, the film surface was quickly converted to a possible ordered vacancy compound (CuIn3Se5). AES depth analysis indicated the presence of a CuIn3Se5 layer on the CuInSe2 surface. The energy bandgap shifted from 1.04 to 1.24 eV by the formation of CuIn 3Se5 phase on CuInSe2 surface. Because the lattice parameters of CuIn3Se5 are smaller, the XRD peaks were shifted to higher 2θ values. In2Se 3/CuInSe2 cells with a thin CuIn3Se5 layer at the interface yielded solar efficiency of 8.46% with an active area of 0.2 cm2. The device fabricated from the films with a thick CuIn3Se5 layer on CuInSe2 film displayed a double diode effect which was possibly caused the increase of junction interface
Keywords
Auger effect; III-VI semiconductors; X-ray diffraction; copper compounds; energy gap; indium compounds; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; vapour deposited coatings; 8.46 percent; AES depth analysis; CuIn3Se5 layer growth; CuIn3Se5-CuInSe2; CuInSe2; CuInSe2 film; In2Se3-CuInSe2; In2Se3/CuInSe2 solar cells; XRD peaks; active area; double diode effect; energy bandgap; junction interface increase; ordered vacancy compound; photovoltaic properties; solar efficiency; thin CuIn3Se5 layer; Computational Intelligence Society; Glass; Optical films; Photovoltaic cells; Photovoltaic systems; Scanning electron microscopy; Semiconductor films; Solar power generation; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654111
Filename
654111
Link To Document