DocumentCode
2433043
Title
Simulation of stochastic doping effects in Si MOSFETs
Author
Frank, D.J. ; Wong, H.-S.P.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2000
fDate
22-25 May 2000
Firstpage
2
Lastpage
3
Abstract
MOSFET threshold voltage (V/sub T/) variation due to random variations in the number and position of dopant atoms is an increasingly important problem as device dimensions shrink and has received increasing attention. This paper describes a recently implemented 3-D Monte Carlo approach for modeling random dopant fluctuation effects in MOSFETs. We also describe the results of simulating dopant fluctuation effects in several different MOSFET structures.
Keywords
MOSFET; Monte Carlo methods; doping profiles; elemental semiconductors; semiconductor device models; silicon; stochastic processes; 3D Monte Carlo model; Si; Si MOSFET; numerical simulation; random fluctuations; stochastic doping effect; threshold voltage; Doping; Fluctuations; Lattices; MOSFETs; Monte Carlo methods; Semiconductor process modeling; Stochastic processes; Threshold voltage; Uncertainty; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869981
Filename
869981
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