DocumentCode
2433224
Title
Evolution of N-V memories: Flash memory trends with PCRAM/FeRAM/ReRAM
Author
Prince, Betty
Author_Institution
IEEE SSCS
fYear
2009
fDate
28-31 Oct. 2009
Firstpage
132
Lastpage
159
Abstract
Anything that stores two states can be a memory. The challenge is to get: required properties and reliability for intended application at a competitive cost.
Keywords
circuit reliability; flash memories; random-access storage; N-V memories; PCRAM/FeRAM/ReRAM; flash memory; reliability; Ferroelectric films; Flash memory; Nonvolatile memory; Phase change random access memory; Random access memory; Seminars;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-5534-8
Type
conf
DOI
10.1109/INTERNANO.2009.5335614
Filename
5335614
Link To Document