Polycrystalline CdS thin film prepared by metalorganic chemical vapor deposition

Author

Uda, Hiroshi ; Fujii, Takayuki ; Ikegami, Sho ; Sonomura, Hajimu

Author_Institution

Fac. of Sci. & Technol., Kinki Univ., Osaka, Japan

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

523

Lastpage

526

Abstract

Polycrystalline CdS thin film has been deposited on borosilicate glass substrate by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperature within the range of 280-350°C. The deposition rate increased with increasing VI/II molar ratio and showed the maximum value at the VI/II molar ratio of 4 for the substrate temperature of 300-350°C. Thin CdS film with lower resistivity and high optical transmittance was prepared at 300°C with over 1 to 4 range of VI/II molar ratio. The CdS film that deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell

Keywords

CVD coatings; II-VI semiconductors; borosilicate glasses; cadmium compounds; chemical vapour deposition; semiconductor growth; semiconductor thin films; solar cells; substrates; 280 to 350 C; CdS; CdS film growth; CdS/CdTe solar cell; VI/II molar ratio; borosilicate glass substrate; diethyl sulfide; dimethyl cadmium; high optical transmittance; lower resistivity; metalorganic chemical vapor deposition; polycrystalline CdS thin film; window layer; Cadmium compounds; Chemical vapor deposition; Conductivity; Glass; Inorganic materials; Optical films; Sputtering; Substrates; Temperature distribution; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654143

Filename

654143