PbSnTe:In-based thin-film microstructures as sensors of IR and terahertz radiation

Author

Shumskyi, Vladimir N.

Author_Institution

Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

103

Lastpage

109

Abstract

The density of localized states in PbSnTe:In and the photosensitivity in intrinsic and impurity absorption bands are computed on the basis of theory of space-charge-limited currents and experimental data. Application of microstructures obtained by molecular-beam epitaxy in the quality of sensors of infrared and terahertz radiation is discussed.

Keywords

IV-VI semiconductors; impurity absorption spectra; impurity states; indium; infrared detectors; lead compounds; localised states; photodetectors; semiconductor epitaxial layers; space-charge-limited conduction; terahertz wave detectors; thin film sensors; tin compounds; IR sensors; PbSnTe:In; density of localised states; impurity absorption band; intrinsic absorption band; molecular-beam epitaxy; photosensitivity; space-charge-limited currents; terahertz radiation sensors; thin-film microstructure; Conductivity; Electron beams; Impurities; Indium; Infrared sensors; Microstructure; Photoconductivity; Seminars; Solids; Thin film sensors; PbSnTe:In; photodetectors; space-charge-limited currents;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335623

Filename

5335623