An influence of polyelectrolyte layer on electrophysical properties of MIS structures

Author

Gorin, Dmitry A. ; Yaschenok, Alexey M. ; Manturov, Alexey O. ; Klimov, Boris N.

Author_Institution

Saratov State Univ., Saratov, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

50

Lastpage

52

Abstract

An influence of polyelectrolyte layers on electrophysical properties of structures metal-insulator-semiconductor (MIS) under its adsorption on the surface of single crystal silicon is shown. Deposition of polyelectrolyte layers on the surface of single crystal silicon leads to change of the resistance of MIS structure. Deposition of polyethylene imine lead to decreasing the resistance of structure whereas following deposition of polystyrene sodium sulfonate and increasing the number of adsorbed polyelectrolyte layers leads to increasing of resistance of MIS structure.

Keywords

MIS structures; adsorbed layers; adsorption; electric resistance; elemental semiconductors; polymer electrolytes; silicon; MIS structures; Si; adsorbed polyelectrolyte layers; electrophysical properties; metal-insulator-semiconductor structure; polystyrene sodium sulfonate; resistance; Assembly; Contacts; Liquid crystal displays; Liquid crystals; Nanoscale devices; Nanostructures; Nonhomogeneous media; Silicon; Solid state circuits; Surface resistance; MIS structure; Polyelectrolyte layers; resistance; silicon; surface;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335636

Filename

5335636