Resonance backscattering and negative magnetoresistance in submicron quantum ring interferometer

Author

Nomokonov, D.V. ; Bykov, A.A.

Author_Institution

Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

14

Lastpage

17

Abstract

Reasons for the occurrence of resonance backscattering peaks in submicron electron ring interferometer are investigated in terms of the model of single-mode resonance trail. The suppression of resonance by magnetic field is explained qualitatively.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; magnetoresistive devices; negative resistance devices; quantum interference devices; semiconductor quantum wells; semiconductor superlattices; GaAs-AlAs-GaAs; magnetic field; negative magnetoresistance; quantum well; resonance backscattering; submicron electron ring interferometer; submicron semiconductor quantum ring interferometer; supperlattice barriers; Backscatter; Ballistic magnetoresistance; Gallium arsenide; Magnetic fields; Magnetic resonance; Magnetic semiconductors; Magnetic tunneling; Physics; Seminars; Voltage; Quantum ring interferometer; resonance backscattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335646

Filename

5335646