Bimodal distribution of drops and holes in indium epitaxy on GaAs(001) substrate

Author

Lyamkina, Anna A. ; Dmitriev, Dmitriy V. ; Galitsyn, Yuri G. ; Moshchenko, Sergey P. ; Toropov, Alexander I.

Author_Institution

Novosibirsk State Univ., Novosibirsk, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

18

Lastpage

20

Abstract

The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5middot10⁷ cm^-2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.

Keywords

drops; evaporation; indium; liquid metals; molecular beam epitaxial growth; nanostructured materials; nucleation; quantum dots; GaAs; GaAs(001) substrate; In; arsenic evaporation; bimodal character; bimodal distribution; drop density; hole distribution; indium drop formation; indium epitaxy; low-density quantum dots; molecular beam epitaxy; nanoholes; nucleation centers; surface defects; Atomic force microscopy; Epitaxial growth; Gallium arsenide; Image analysis; Indium; Molecular beam epitaxial growth; Quantum dots; Statistical distributions; Substrates; Surface morphology; Molecular beam epitaxy; distribution; droplet epitaxy; nanoholes;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335647

Filename

5335647