• DocumentCode
    2433850
  • Title

    Modeling of static characteristics of resonant-tunneling structures

  • Author

    Obukhov, I.A.

  • Author_Institution
    Interface Ltd., Moscow, Russia
  • fYear
    2000
  • fDate
    11-15 Sept. 2000
  • Firstpage
    423
  • Lastpage
    427
  • Abstract
    The model for the calculation of static characteristics of Resonant-Tunneling Structures (RTS) and Resonant-Tunneling Diodes (RTD) adequately for experimental purposes are presented.
  • Keywords
    microwave diodes; resonant tunnelling devices; resonant tunnelling diodes; semiconductor device models; RTD modeling; charge transport model; resonant-tunneling diodes; resonant-tunneling structures; static characteristics modelling; Bismuth; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Organizing; Resonant tunneling devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
  • Conference_Location
    Crimea, Ukraine
  • Print_ISBN
    966-572-048-1
  • Type

    conf

  • DOI
    10.1109/CRMICO.2000.1256167
  • Filename
    1256167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2433850