DocumentCode
2434772
Title
Internal profile reconstruction for MEMS microstructures based on infrared transmission technology
Author
Liu, Yi ; Xue, Chenyang ; Chou, Xiujian ; Niu, Kangkang ; Liu, Jun
Author_Institution
Key Lab. of Instrum. Sci. & Dynamic Meas., North Univ. of China, Taiyuan, China
fYear
2010
fDate
20-23 Jan. 2010
Firstpage
1029
Lastpage
1032
Abstract
The measurement system based on white light interference technology is proposed for the internal profile measurement of standard GaAs step micro structures. It is extended from white light interference measurement to the infrared light transmission interference measurement. Comparing with measurement results in reflection interference and infrared transmission interference experiments, the whole system including algorithm is feasible for the resolution of internal profile of micro structures. Measurement resolution can reach micron level on lateral and nanometer on axial direction. The system, which can basically realize the transmission measurement of micro structures, has the potential application in the sidewall and bottom profile measurement of micro structures with high aspect ratio.
Keywords
gallium arsenide; light interference; micromechanical devices; reflection; GaAs; GaAs step microstructure; MEMS microstructure; infrared transmission technology; internal profile measurement; internal profile reconstruction; reflection interference; transmission interference measurement; white light interference technology; high aspect ratio; transmission interference; vertical scanning interferometry; white-light interference;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location
Xiamen
Print_ISBN
978-1-4244-6543-9
Type
conf
DOI
10.1109/NEMS.2010.5592581
Filename
5592581
Link To Document