DocumentCode
2436084
Title
Effect of front-surface doping on back-surface passivation in Ga 0.5In0.5P cells
Author
Kurtz, Sarah R. ; Olson, J.M. ; Friedman, D.J. ; Reedy, R.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
819
Lastpage
822
Abstract
The emitter doping of a solar cell usually affects the blue response of the cell because the blue light is strongly absorbed at the front of the cell in the emitter layer. However, we show here that changing the identity of the dopant at the front of the cell affects the performance of the back of the cell, sometimes more than the performance of the front of the cell. Specifically, a highly Zn-doped Ga0.5 In0.5P layer makes a good back-surface field in an n-on-p Ga0.5In0.5P cell with Se doping, but not when Si doping is used, consistent with the results of Takamoto, et al. During growth of the n-type layers, Zn diffuses up through the cell, piling up at the junction. When Si doping is used, the diffusion is enhanced
Keywords
III-V semiconductors; diffusion; gallium compounds; indium compounds; passivation; semiconductor doping; solar cells; zinc; Ga0.5In0.5P; Ga0.5In0.5P cells; Ga0.5In0.5P:Se; Ga0.5In0.5P:Si; Ga0.5In0.5P:Zn; Se doping; Si doping; Zn diffusion; Zn-doped Ga0.5In0.5P layer; back-surface field; back-surface passivation; blue light absorption; blue response; emitter doping; front-surface doping effect; n-on-p Ga0.5In0.5P solar cells; Doping; Gallium arsenide; Laboratories; Passivation; Photoconductivity; Photonic band gap; Photovoltaic cells; Renewable energy resources; Temperature; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654213
Filename
654213
Link To Document