• DocumentCode
    2436411
  • Title

    Automatic parameter extractor for nonlinear models of microwave MESFETs

  • Author

    Kishchinskiy, A.A. ; Svistov, Ye.A. ; Baranov, V.V. ; Polyakov, G.B.

  • Author_Institution
    Central Res. Inst. of Radio Eng., Fed. State-Owned Unitary Enterprise, Moscow, Russia
  • fYear
    2003
  • fDate
    8-12 Sept. 2003
  • Firstpage
    209
  • Lastpage
    211
  • Abstract
    Results of developing an automated measuring bench for measuring and identifying parameters of nonlinear microwave GaAs MESFET models in the form of crystals are presented. Measuring techniques, data processing, equipment setup and features are discussed.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; automatic parameter extractor; data processing; metal-semiconductor field effect transistor; microwave GaAs MESFET; nonlinear parameters; HEMTs; Helium; IEEE catalog; MESFETs; MODFETs; Microwave technology; Modems; Organizing; Scattering parameters; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-26-X
  • Type

    conf

  • DOI
    10.1109/CRMICO.2003.158797
  • Filename
    1256482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2436411