Projected performance of three- and four-junction devices using GaAs and GaInP

Author

Kurtz, Sarah R. ; Myers, D. ; Olson, J.M.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

875

Lastpage

878

Abstract

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; solar cells; 500 suns concentration; Ga_0.5In_0.5P-GaAs; Ga_0.5In_0.5P-GaAs solar cells; air mass effects; efficiencies; four-junction solar cells; low concentration effects; projected performance; space applications; spectral variations function; temperature effects; terrestrial applications; three-junction solar cells; turbidity effects; water-vapor content effects; Algorithm design and analysis; Gallium arsenide; Laboratories; Photoconductivity; Photonic band gap; Photovoltaic cells; Production; Renewable energy resources; Sun; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654226

Filename

654226