DocumentCode
2438928
Title
Effects of reverse bias on multijunction cells
Author
Yoo, H.I. ; Iles, P.A.
Author_Institution
TECSTAR/ASD, CA, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
883
Lastpage
886
Abstract
Cascade multijunction GaInP/GaAs solar cells show increased tendency to degrade after exposure to reverse currents, the result of partial or full shadowing of the cells. Here, the authors present expertise results, and discuss possible root causes of this degradation, and also list several possible protective measures
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor device testing; solar cells; GaInP-GaAs; cascade multijunction GaInP/GaAs solar cells; performance degradation; protective measures; reverse bias effects; reverse currents exposure; root causes; shadowing; Cities and towns; Current measurement; Degradation; Gallium arsenide; Light emitting diodes; Photovoltaic cells; Protection; Shadow mapping; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654228
Filename
654228
Link To Document