A technique for manufacturing dielectric membranes

Author

Demchenko, A.I. ; Koryakin, S.V. ; Zavadskaya, N.I. ; Lobko, E.V.

Author_Institution

Minsk Res. Inst. of Radio Mater., Belarus

fYear

2003

fDate

8-12 Sept. 2003

Firstpage

592

Lastpage

593

Abstract

A topical problem in manufacturing MEMS devices and various membrane-based sensors is the production of high-quality membranes. Dielectric and polysilicon films are used M. M Farooqui et al. (1991) for membranes. Dielectric membranes consisting of SiO/sub 2/, Si/sub 3/N/sub 4/ materials have also found wide application. The SiO/sub 2/, Si/sub 3/N/sub 4/ materials have high electrical resistivity and low thermal conduction, which makes them materials of choice for thermal membrane sensors where minimal losses of thermal energy are required.

Keywords

dielectric materials; electrical resistivity; heat conduction; micromechanical devices; MEMS device; dielectric film; dielectric membrane manufacturing; high electrical resistivity; high-quality membranes; low thermal conduction; microelectromechanical system; polysilicon film; thermal membrane sensor; Biomembranes; Conducting materials; Dielectric films; Dielectric materials; Electric resistance; Manufacturing; Microelectromechanical devices; Production; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-7968-26-X

Type

conf

DOI

10.1109/CRMICO.2003.158947

Filename

1256633