High power epitaxially-stacked varactor diode multipliers: performance and applications at W-band

Author

Cushman, J.F. ; Occhiuti, F. ; McDonagh, E.M. ; Hines, M.E. ; Staecker, P.W.

Author_Institution

M/A-COM Inc., Burlington, MA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

923

Abstract

Single-diode varactor multipliers capable of providing 260-mW CW (continuous wave) and 850-mW pulsed at 94 GHz are described. Improved performance for the generation of millimeter power at W-band is demonstrated using these single-diode doublers and cascaded multiplier chains for both CW and pulsed operation. Frequency multipliers using epitaxially stacked varactors have given an order-of-magnitude increase in power capability for varactor frequency multiplication; they now provide higher power per device chip than any other millimeter-wave solid-state device.<>

Keywords

frequency multipliers; solid-state microwave circuits; varactors; 260 mW; 850 mW; 94 GHz; CW operation; EHF; MM-wave device; W-band; cascaded multiplier chains; epitaxially stacked diode configuration; frequency multiplication; high power type; millimeter power; millimeter-wave solid-state device; power capability; pulsed operation; single-diode doublers; varactor diode multipliers; Circuits; Coaxial components; Diodes; Frequency conversion; Heat sinks; Low pass filters; Packaging; Power generation; Pulse amplifiers; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99729

Filename

99729