Millimeter-wave double-drift hybrid Read profile Si IMPATT diodes

Author

Pao, C.K. ; Chen, J.C. ; Rolph, R.K. ; Igawa, A.T. ; Herman, M.I.

Author_Institution

Hughes Aircraft Co., Torrance, CA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

927

Abstract

Double-drift Si IMPATT (impact avalanche and transit time) diodes with hybrid Read profiles were designed, fabricated and tested for millimeter-wave frequency operation. Vapor phase epitaxy (VPE) growth was used to achieve well-controlled, abrupt n-type doping transitions. The authors achieved 1.95 W with 11.7% efficiency at Q-band (40.6 GHz). At V-band, 1.05 W with 13.6% efficiency (61 GHz) was achieved, and an injection-locked amplifier achieved 20-dB gain, 800 mW and 2-GHz bandwidth with greater than 10% efficiency. Finally, at W-band, the authors achieved 612 mW with 5.7% efficiency (93 GHz) and for long pulse operation 1.08-W peak power at 96 GHz.<>

Keywords

IMPATT diodes; elemental semiconductors; silicon; vapour phase epitaxial growth; 2 GHz; 20 dB; 40.6 to 96 GHz; 5.7 to 13.6 percent; 612 mW to 1.95 W; IMPATT diodes; MM-wave device; Q-band; Si; V-band; VPE; W-band; abrupt n-type doping transitions; double-drift hybrid Read profile; impact avalanche; injection-locked amplifier; long pulse operation; microwave device; millimeter-wave frequency operation; vapour phase epitaxial growth; Diodes; Doping profiles; Epitaxial growth; Gallium arsenide; Millimeter wave technology; Molecular beam epitaxial growth; Pulse amplifiers; Silicon; Temperature; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99730

Filename

99730