DocumentCode
2440644
Title
Electron irradiation - a method of producing fast switching high power diodes
Author
Tarneja, K.S. ; Bartko, J.
Author_Institution
Westinghouse Electric Corporation, Youngwood, Pennsylvania, USA
fYear
1975
fDate
9-11 June 1975
Firstpage
269
Lastpage
272
Abstract
A 2 MeV electron irradiation production technique for tailoring the switching speed of high power semiconductor diodes is discussed. This technique is compared with gold doping and its inherent advantages are presented. Among the latter are precise control of fast switching characteristics, excellent reproducibility and no increases in leakage at low switching speeds.
Keywords
Annealing; Doping; Gold; Radiation effects; Semiconductor diodes; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1975 IEEE
Conference_Location
Culver City, California, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1975.7085590
Filename
7085590
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