• DocumentCode
    2440662
  • Title

    Structures and characteristics of 400A–300V monolithic high power transistors

  • Author

    Saeki, Shuzo

  • Author_Institution
    Toshiba Transistor Works, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
  • fYear
    1975
  • fDate
    9-11 June 1975
  • Firstpage
    274
  • Lastpage
    281
  • Abstract
    Toshiba has developed two types of high power npvn transistors which have collector current ratings of 400A and collector-emitter voltage ratings of 300V. The first is a conventional one and the second is a monolithic Darlington-connected one. Both have the same 40mmφ pellet size. They are produced by triple diffusion techniques. The structures, features and electrical characteristics of these transistors are described.
  • Keywords
    Electrodes; Integrated circuits; Power transistors; Resistance; Switches; Thyristors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1975 IEEE
  • Conference_Location
    Culver City, California, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1975.7085592
  • Filename
    7085592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2440662