Realization of high-efficiency 10 GHz bandwidth silicon photodetector arrays for fully integrated optical data communication interfaces

Author

Emsley, M.K. ; Dosunmu, O. ; Ünlü, M.S. ; Muller, P. ; Leblebici, Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Boston Univ. Photonics Center, MA, USA

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

47

Lastpage

50

Abstract

We present a commercially reproducible fabrication technique for producing high quantum efficiency photodiodes with up to 10 GHz bandwidth on double silicon-on-insulator (SOI) wafers. The substrate consists of a two-period distributed Bragg reflector (DBR), which provides a 90% reflecting surface. Resonant-cavity-enhanced (RCE) Si photodetectors with 40% quantum efficiency at 860 nm and a FWHM of 29 ps suitable for 10 Gbps data communications are demonstrated We also demonstrate integrated photodiode arrays in silicon substrate for multi-channel high speed serial interfaces.

Keywords

chemical vapour deposition; integrated optoelectronics; optical backplanes; optical receivers; p-i-n photodiodes; photodetectors; silicon-on-insulator; 10 GHz; 10 Gbit/s; 860 nm; Si; commercially reproducible fabrication technique; double SOI wafers; fully integrated optical data communication interfaces; high quantum efficiency photodiodes; integrated photodiode arrays; low-pressure chemical vapour deposition; multichannel high speed serial interfaces; optical backplane; pin photodetector; receiver circuits; resonant-cavity-enhanced photodetectors; two-period distributed Bragg reflector; Bandwidth; Data communication; Distributed Bragg reflectors; High speed optical techniques; Integrated optics; Optical arrays; Optical device fabrication; Photodetectors; Photodiodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256807

Filename

1256807