Logistic modeling of progressive breakdown in ultrathin gate oxides

Author

Miranda, E. ; Bandiera, L. ; Cester, A. ; Paccagnella, A.

Author_Institution

Dipt. di Ingegneria dell´´ Informazione, Universita degli Studi di Padova, Italy

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

83

Lastpage

86

Abstract

The sigmoidal behavior exhibited by the current-time characteristics of constant voltage stressed MOS capacitors with ultrathin oxides is ascribed to a self-constrained increase of the leakage sites population that assist the conduction process between the electrodes. To analytically describe this dynamical process we consider a classical model of population growth theories such as the Verhulst differential equation. The role played by the background tunneling current in the detection of the breakdown event is also discussed.

Keywords

MOS capacitors; dielectric thin films; differential equations; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; tunnelling; MOS capacitor current-time characteristics; Verhulst differential equation; background tunneling current; constant voltage stressed MOS capacitors; electrode conduction process; gate oxide logistic modeling; leakage current; leakage sites population growth; ultrathin gate oxide progressive breakdown; Degradation; Differential equations; Electric breakdown; Event detection; Leakage current; Logistics; MOS capacitors; Stress; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256816

Filename

1256816