DocumentCode
2441153
Title
Relationship between yield and reliability impact of plasma damage to gate oxide
Author
Mason, P.W. ; DeBusk, D.K. ; McDaniel, J.K. ; Oates, AS ; Cheung, K.P.
Author_Institution
Lucent Technol. Bell Labs., Orlando, FL, USA
fYear
2000
fDate
2000
Firstpage
2
Lastpage
5
Abstract
We report a direct correlation between gate oxide damage measured on antenna testers and yield loss as well as reliability degradation on production chips. The relationship between the magnitude of the yield loss and the reliability failure is explored. We demonstrate, by modeling and by experimental verification, that plasma charging damage can generically cause yield loss and long term reliability degradation but has only minor impact on short-term reliability
Keywords
integrated circuit reliability; integrated circuit yield; plasma materials processing; antenna tester; gate oxide; plasma damage; reliability; yield; Degradation; MOSFETs; Plasma applications; Plasma materials processing; Plasma measurements; Plasma temperature; Production; Radio frequency; Radiofrequency identification; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
0-9651577-4-1
Type
conf
DOI
10.1109/PPID.2000.870560
Filename
870560
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