• DocumentCode
    2441153
  • Title

    Relationship between yield and reliability impact of plasma damage to gate oxide

  • Author

    Mason, P.W. ; DeBusk, D.K. ; McDaniel, J.K. ; Oates, AS ; Cheung, K.P.

  • Author_Institution
    Lucent Technol. Bell Labs., Orlando, FL, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    2
  • Lastpage
    5
  • Abstract
    We report a direct correlation between gate oxide damage measured on antenna testers and yield loss as well as reliability degradation on production chips. The relationship between the magnitude of the yield loss and the reliability failure is explored. We demonstrate, by modeling and by experimental verification, that plasma charging damage can generically cause yield loss and long term reliability degradation but has only minor impact on short-term reliability
  • Keywords
    integrated circuit reliability; integrated circuit yield; plasma materials processing; antenna tester; gate oxide; plasma damage; reliability; yield; Degradation; MOSFETs; Plasma applications; Plasma materials processing; Plasma measurements; Plasma temperature; Production; Radio frequency; Radiofrequency identification; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 2000 5th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-9651577-4-1
  • Type

    conf

  • DOI
    10.1109/PPID.2000.870560
  • Filename
    870560