DocumentCode
2441214
Title
Measurement of VUV induced surface conduction in dielectrics using synchrotron radiation
Author
Joshi, Mayur ; McVittie, James P. ; Saraswat, Krishna ; Cismaru, Cristian ; Shohet, J. Leon
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
2000
fDate
2000
Firstpage
14
Lastpage
17
Abstract
In a plasma processing chamber, the combination of VUV (vacuum ultra-violet) flux and electric fields (either due to plasma non-uniformity or electron shading) across structures on a wafer can induce photoconduction currents in insulating dielectrics. These currents can either flow through the bulk of the dielectrics or along the surface. In this paper we report the results of our experiments on studying VUV induced surface currents. These currents, if they are large enough, would modify surface charging and hence are important to understanding, predicting and controlling plasma charging damage
Keywords
dielectric thin films; photoconductivity; plasma materials processing; surface charging; synchrotron radiation; ultraviolet radiation effects; VUV irradiation; electric field; electron shading; insulating dielectric; photoconduction current; plasma charging damage; plasma processing; surface charging; surface conduction; synchrotron radiation; Current measurement; Dielectric measurements; Electrons; Fingers; Gold; Plasma applications; Plasma materials processing; Plasma measurements; Surface charging; Synchrotron radiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
0-9651577-4-1
Type
conf
DOI
10.1109/PPID.2000.870570
Filename
870570
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