Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides

Author

Zhao, C.Z. ; Zhang, J.F. ; Groeseneken, G. ; Degraeve, R. ; Ellis, J.N. ; Beech, C.D.

Author_Institution

Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK

fYear

2000

fDate

2000

Firstpage

129

Lastpage

132

Abstract

A significant number (~10¹² cm^-2) of fixed and mobile positive charges are generated in gate oxides during forming gas (FG, 10%H₂) anneal at 450°C. We report here for the first time that the (simulated) plasma charging enhances this generation. The generation increases with the FG anneal time and no saturation was observed. The dependence of the generation on the simulated plasma charging condition is investigated. The electrical and thermal properties of these positive charges are explored. Wherever possible, the FG anneal induced positive charges are compared with the defects responsible for irradiation and hot carrier induced degradation. Several important differences are found between them and we conclude that they have different origins

Keywords

CMOS integrated circuits; MOSFET; annealing; hot carriers; 450 degC; CMOS process; MOSFET; Si-SiO₂; fixed positive charges; forming gas annealing; gate oxides; hot carrier induced degradation; mobile positive charges; plasma charging; positive charge generation; Annealing; CMOS process; CMOS technology; Hydrogen; MOSFET circuits; Plasma devices; Plasma measurements; Plasma properties; Plasma simulation; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 2000 5th International Symposium on

Conference_Location

Santa Clara, CA

Print_ISBN

0-9651577-4-1

Type

conf

DOI

10.1109/PPID.2000.870639

Filename

870639