Electrical properties of MOCVD praseodymium oxide based MOS structures

Author

Nigro, R. Lo ; Toro, R. ; Malandrino, G. ; Raineri, V. ; Fragalà, I.L.

Author_Institution

IMM, CNR, Catania, Italy

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

375

Lastpage

378

Abstract

Praseodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour deposition (MOCVD) at 750/spl deg/C on p-type Si (100) substrates have been proposed. It has been revealed by energy-filtered TEM analyses that depositions in 10/sup -3/ torr oxygen partial pressure produced a Pr/sub 2/O/sub 3/ and a Pr/sub n/O/sub 2n-2//spl middot/SiO/sub 2/ bottom layer. The electrical properties of both Pr/sub 2/O/sub 3//Pr/sub n/O/sub 2n-2//spl middot/SiO/sub 2/ structures and Pr/sub n/O/sub 2n-2//spl middot/SiO/sub 2/ thin layers have been investigated and compared.

Keywords

MIS structures; MOCVD coatings; dielectric thin films; leakage currents; praseodymium compounds; 10/sup -3/ torr; 750 degC; MOCVD; Pr/sub 2/O/sub 3/-SiO/sub 2/-Si; energy-filtered TEM; high k dielectric thin films; leakage current density; metal-organic chemical vapour deposition; p-type Si (100) substrates; praseodymium oxide based MOS structures; Capacitance; Chemical vapor deposition; Dielectric materials; Dielectric substrates; Dielectric thin films; Electrons; High K dielectric materials; High-K gate dielectrics; MOCVD; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256892

Filename

1256892