Mobility degradation in high-k transistors: the role of the charge scattering

Author

Lujan, G.S. ; Kubicek, S. ; De Gendt, S. ; Heyns, M. ; Magnus, W. ; De Meyer, K.

Author_Institution

IMEC, Leuven, Belgium

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

399

Lastpage

402

Abstract

In this paper, we propose a model to calculate the mobility degradation due to remote Coulomb scattering. The model is able to predict the effects of an arbitrary charge distribution in the gate dielectric. We model the mobility degradation for HfO/sub 2/ transistors. An exponential charge distribution results in the best agreement. We observe also that the inversion charge is able to screen the effect of the remote charge, thus increasing the mobility while decreasing the EOT.

Keywords

MOSFET; Poisson equation; carrier mobility; dielectric thin films; electron collisions; semiconductor device models; EOT; NMOS transistors; Poisson equation; Si-HfO/sub 2/; carrier mobility; charge scattering; electron scattering; exponential charge distribution; gate dielectric charge distribution; high-k dielectric layers; high-k transistors; inversion charge; mobility degradation; remote Coulomb scattering; Degradation; Doping; Electrons; High K dielectric materials; High-K gate dielectrics; Impurities; Leakage current; Phonons; Scattering; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256898

Filename

1256898