DocumentCode
2443299
Title
5-GHz band 30 watt power GaAs FETs
Author
Yanagawa, S. ; Takagi, K. ; Yamada, Y.
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1990
fDate
8-10 May 1990
Firstpage
985
Abstract
C-band high-power and high-efficiency GaAs FETs (field-effect transistors) have been developed. The active region of the FET chip has been highly integrated by forming long gate fingers. Four chips are power-combined efficiently by using internal matching circuits. The FETs deliver an output power at 1-dB gain-compression point of 30 W with 6.8-dB gain and 28% power-added efficiency, and a saturated output power of 33 W at 5.5 GHz. They exhibit an excellent linearity with a third-order intermodulation distortion intercept point of +55 dBm.<>
Keywords
III-V semiconductors; field effect integrated circuits; field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 28 percent; 30 W; 33 W; 5.5 GHz; 6.8 dB; C-band high power FETs; FET chip; GaAs; active region; gain; internal matching circuits; linearity; long gate fingers; output power; power combiner; power-added efficiency; saturated output power; third-order intermodulation distortion intercept point; Fingers; Gain; Gallium arsenide; Linearity; Microwave FETs; Power generation; Solid state circuits; Substrates; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99744
Filename
99744
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