DocumentCode
2443321
Title
P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance
Author
Mironov, O.A. ; Myronov, M. ; Durov, S. ; Leadley, D.R. ; Hackbarth, T. ; Höck, G. ; Herzog, H.-J. ; König, U. ; von Kanel, H. ; Parker, E.H.C. ; Whall, T.E.
Author_Institution
Dept. of Phys., Warwick Univ., Coventry, UK
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
557
Lastpage
560
Abstract
Measurements of current drive in p-Si/sub 1-x/Ge/sub x/ MOSFETs, with x=0.7 and 0.8, reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 /spl mu/m. They also show a lower knee voltage in output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with an Sb-doped punch-through stopper.
Keywords
Ge-Si alloys; MOSFET; antimony; hole mobility; semiconductor materials; 0.55 micron; MOSFET drive current; SiGe; SiGe:Sb; drain induced barrier lowering; effective channel length; hole mobility; knee voltage; metamorphic MOSFET; off current; punch-through stopper; subthreshold swing; CMOS process; Current measurement; Knee; Length measurement; MOSFET circuits; Molecular beam epitaxial growth; Plasma applications; Plasma chemistry; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256937
Filename
1256937
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