Novel varactors in BiCMOS technology with improved characteristics

Author

Maget, Judith ; Kraus, Rainer

Author_Institution

Dept. Wireless Syst. LIN D1, Infineon Technol. AG, Munich, Germany

fYear

2001

fDate

29-31 Oct. 2001

Firstpage

59

Lastpage

62

Abstract

The first true BiCMOS varactor combining typical elements of CMOS and bipolar Technologies is presented. Several test structures and different versions have been manufactured in a 0.25 μm BiCMOS technology and measured. The first type of the proposed novel varactor structure features a capacitance tuning range (ratio of maximum to minimum achievable values) C_max/C_min of 3.8:1 with a minimum quality factor Q of 32 and a maximum Q of 273. Choosing the second type of the herein presented novel device, allows quality factors from 6 to above 500, while increasing the capacitance tuning range to an outstanding value of 10.11:1.

Keywords

BiCMOS analogue integrated circuits; Q-factor; circuit tuning; integrated circuit testing; varactors; 0.25 micron; BiCMOS technology; capacitance tuning range; quality factor; test structures; varactors; BiCMOS integrated circuits; CMOS technology; Inductors; Manufacturing; Parasitic capacitance; Q factor; Testing; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on

Print_ISBN

0-7803-7522-X

Type

conf

DOI

10.1109/ICM.2001.997486

Filename

997486