Reverse characteristics of commercial silicon solar cells-impact on hot spot temperatures and module integrity

Author

Danner, M. ; Bucher, K.

Author_Institution

Fraunhofer-Inst. fur Solare Energiesyst., Freiburg, Germany

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

1137

Lastpage

1140

Abstract

For commercial silicon solar cells of 12 manufacturers, reverse I-V characteristics (10 cells each to obtain statistics) and infrared thermal images have been analysed. Except for one cell type, there is a large scatter. Even within batches, cell behaviour varies strongly between avalanche breakdown and thermal breakdown. The impact on blocking diode concepts and maximum cell temperatures, as compared to EVA cure temperatures, is discussed. Some module designs may have to be reviewed

Keywords

avalanche breakdown; electric current measurement; elemental semiconductors; infrared imaging; silicon; solar cells; temperature measurement; thermal analysis; voltage measurement; EVA cure temperatures; Si; Si solar cells; avalanche breakdown; blocking diode concept impact; cell behaviour; commercial silicon solar cells; hot spot temperatures; infrared thermal images; maximum cell temperature; module integrity; power dissipation; reverse I-V characteristics; reverse characteristics; shaded solar cell; thermal breakdown; thermal imaging; Avalanche breakdown; Diodes; Image analysis; Infrared imaging; Manufacturing; Photovoltaic cells; Scattering; Silicon; Statistical analysis; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654289

Filename

654289