DocumentCode
2445029
Title
Fabrication of single-electron tunneling devices
Author
Yoo, K.-H. ; Park, J.C. ; Park, J.W. ; Choi, J.B.
Author_Institution
Korea Res. Inst. of Stand. & Sci., Taejon, South Korea
fYear
1996
fDate
17-21 June 1996
Firstpage
263
Lastpage
264
Abstract
We have fabricated very small Al/AlO/sub x//Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150/spl times/150 nm/sup 2/.
Keywords
aluminium; aluminium compounds; electric current measurement; electron beam lithography; interface states; measurement standards; tunnelling; 150 nm; Al-AlO-Al; Al/AlO/sub x//Al junctions; SEM micrograph; current standard; double-angle evaporation; electron-beam lithography; fabrication; Artificial intelligence; Electrodes; Fabrication; Frequency; Lithography; Physics; Scanning electron microscopy; Silicon; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location
Braunschweig, Germany
Print_ISBN
0-7803-3376-4
Type
conf
DOI
10.1109/CPEM.1996.547063
Filename
547063
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