A 19-23 GHz integrated LC-VCO in a production 70 GHz fT SiGe technology

Author

Veenstra, Hugo ; Van der Heijden, Edwin

Author_Institution

Philips Res., Eindhoven, Netherlands

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

349

Lastpage

352

Abstract

Integrated LC-VCOs for microwave frequencies are widely used nowadays. Traditionally, a lot of attention is paid to optimize the quality factor of the integrated inductor and varactor. The active part of the oscillator, used to undamp the resonator circuit, is often implemented as a cross-coupled differential pair. Even with a near-loss-less resonator circuit, this cross-coupled pair inherently puts a limit to the maximum attainable oscillation frequency. We derive a relation for this maximum attainable frequency f/sub cross/, and demonstrate a 19-23 GHz integrated LC-VCO approaching this theoretical limit for our IC-technology.

Keywords

Ge-Si alloys; Q-factor; circuit optimisation; coupled circuits; integrated circuit technology; microwave frequency convertors; resonators; voltage-controlled oscillators; 19 to 23 GHz; 70 GHz; IC technology; SiGe; SiGe technology; cross-coupled differential pair; integrated LC-VCO; integrated inductor; maximum attainable oscillation frequency; microwave frequencies; near-loss-less resonator circuit; quality factor; varactor; Capacitance; Circuits; Frequency; Germanium silicon alloys; Inductors; Production; Resistors; Silicon germanium; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257144

Filename

1257144