DocumentCode
2448043
Title
Pulse-doped GaAs MESFETs with planar self-aligned gate for MMIC
Author
Nakajima, Shigeru ; Otobe, Kenji ; Kuwata, Nobuhiro ; Shiga, Nobuo ; Matsuzaki, Ken-Ichiro ; Hayashi, Hideki
Author_Institution
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fYear
1990
fDate
8-10 May 1990
Firstpage
1081
Abstract
A pulse-doped GaAs MESFET with an n/sup +/ self-aligned planar gate has been developed. This device shows excellent drain current linearity and minimum noise figures of 0.72 dB (1.15 dB) with associated gains of 10.5 dB (8.5 dB) at 12 GHz (18 GHz). Furthermore, excellent uniformity and reproducible device characteristics have been realized.<>
Keywords
MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; semiconductor doping; solid-state microwave devices; 0.72 dB; 1.15 dB; 10.5 dB; 12 GHz; 18 GHz; 8.5 dB; GaAs; III-V semiconductor; MESFET; MMIC; SHF; monolithic microwave IC; n/sup +/ planar gate; planar self-aligned gate; pulse-doped device; Annealing; Gallium arsenide; HEMTs; Integrated circuit noise; MESFETs; MMICs; MODFETs; Microwave devices; Reproducibility of results; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99767
Filename
99767
Link To Document