GaAlSb based VCSEL and edge emitting lasers

Author

Koeth, J. ; Bleuel, T. ; Werner, R. ; Forchel, A.

Author_Institution

Tech. Phys., Wurzburg Univ., Germany

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

28

Abstract

Optoelectronic emitters based on the GaAlInSb system have received a rapidly increasing attention during the last few years. This is mainly due to two reasons. (i) This material system allows one to realize lasers which cover the wavelength range from about 1.3 μm to 3 μm and beyond, i.e. the relevant wavelength ranges for telecommunication. (ii) The large refractive index difference of GaSb and AlSb of about 0.7 allows to realize monolithic VCSELs in the 1.3 μm wavelength range and above. Due to the much smaller refractive index variation InGaAsP lasers which are commonly used at 1.3 and 1.5 μm much less favourable for long wavelength vertical emitters. We present GaAlSb VCSEL lasers

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; laser transitions; optical transmitters; refractive index; semiconductor lasers; surface emitting lasers; 1.3 to 3 mum; 1.5 mum; GaAlInSb; GaAlSb; GaAlSb VCSEL lasers; GaAlSb based VCSEL lasers; GaAlSb based edge emitting lasers; InGaAsP; large refractive index difference; long wavelength vertical emitters; optoelectronic emitters; smaller refractive index variation InGaAsP lasers; telecommunication; wavelength range; Gallium arsenide; Gas lasers; Laser excitation; Mirrors; Optical materials; Pump lasers; Resonance; Stimulated emission; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737716

Filename

737716