The design of microwave subsystems based on a device physical model

Author

Pantoja, R.R. ; Howes, M.J. ; Richardson, J.R. ; Snowden, C.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Leeds Univ., UK

fYear

1988

fDate

7-9 June 1988

Firstpage

2065

Abstract

A numerical simulation to characterize both the DC and RF behaviour of GaAs MESFETs is described. It is based on coupling the four semiclassical semiconductor equations with analytical expressions for the channel and solving these using a forward-difference scheme. In the approach taken, the semiconductor equations are reduced to a one-dimensional approximation using the expressions for the channel, requiring substantially less computing resources than a full two-dimensional simulation. CPU time is typically reduced by a factor of 1000. DC and RF results for a 0.5- mu m MESFET are presented.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; difference equations; gallium arsenide; semiconductor device models; solid-state microwave devices; 0.5 micron; DC behaviour; GaAs; MESFETs; RF behaviour; channel; design; forward-difference scheme; microwave subsystems; numerical simulation; one-dimensional approximation; physical model; semiclassical semiconductor equations; Analytical models; Computational modeling; Difference equations; Electrons; Gallium arsenide; MESFETs; Microwave devices; Poisson equations; Radio frequency; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo, Finland

Type

conf

DOI

10.1109/ISCAS.1988.15347

Filename

15347