First results of s.i. GaAs single crystal growth applying the vapour pressure controlled Czochralski method

Author

Neubert, M. ; Seifert, M. ; Rudolph, P. ; Trompa, K. ; Pietsch, M.

Author_Institution

Inst. fur Kristallzuchtung, Berlin, Germany

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

17

Lastpage

20

Abstract

The purpose of this paper is to show the current stage of development of the Vapour Pressure Controlled Czochralski Method (VCZ) at the Institute of Crystal Growth (IKZ) in Berlin. First 3" s.i. GaAs crystals, grown in our laboratory, will be presented. The paper briefly summarizes investigations on i) crystal perfection i.e., etch pit density (EPD), cell structure, precipitates and, ii) electrical data, The properties of the crystals are acceptable for s.i. GaAs. An average EPD in the range from 1 to 2×10⁴ cm^-2 is just achieved but, does not yet match the requirements of very low EPD material

Keywords

III-V semiconductors; crystal growth from melt; dislocation etching; electrical resistivity; gallium arsenide; precipitation; semiconductor growth; semiconductor materials; 3 in; GaAs; GaAs single crystal growth; cell structure; crystal perfection; electrical data; etch pit density; precipitates; vapour pressure controlled Czochralski method; Crystalline materials; Crystals; Etching; Gallium arsenide; Laboratories; Pressure control; Solids; Temperature control; Temperature distribution; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570868

Filename

570868