Comprehensive analytical charge control and I-V model of modern MOSFET´s by fully comprising quantum mechanical effects

Author

Ma, Yutao ; Liu, Litian ; Tian, Lilin ; Yu, Zhiping ; Li, Zhijian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2000

fDate

2000

Firstpage

112

Lastpage

115

Abstract

A new analytical charge control and I-V model for sub-micron and deep sub-micron MOSFETs is developed based on a newly developed charge control model in a MOS structure. Threshold voltage shift due to quantum mechanical effects (QMEs), finite inversion layer thickness effect (inversion layer capacitance) as well as increased depletion layer charge density after the strong inversion point are used cooperatively in the model

Keywords

MOSFET; capacitance; electric charge; electric current; inversion layers; quantum interference phenomena; semiconductor device models; MOS structure; MOSFETs; QMEs; analytical charge control/I-V model; charge control model; depletion layer charge density; finite inversion layer thickness effect; inversion layer capacitance; quantum mechanical effects; strong inversion point; threshold voltage shift; Analytical models; Degradation; Integrated circuit modeling; MOSFET circuits; Numerical models; Poisson equations; Quantum capacitance; Quantum mechanics; Threshold voltage; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871220

Filename

871220