Effects of nitrogen on the activation/deactivation of boron and indium in n-channel CMOS devices

Author

Aronowitz, Sheldon ; Puchner, Helmut ; Zubcov, V.

Author_Institution

LSI Logic Corp., Santa Clara, CA, USA

fYear

2000

fDate

2000

Firstpage

159

Lastpage

162

Abstract

Activation/deactivation behavior of combinations of electrically active dopants boron and indium with nitrogen was studied both experimentally and quantum chemically. It was found that direct correlations could be made between relative electrical activity and top-filled/lowest-empty molecular orbitals obtained with a model silicon lattice system. The trend in activation explained the device behavior observed when retrograde indium channels in NMOS devices were created with nitrogen present to control gate oxide growth

Keywords

CMOS integrated circuits; boron; doping profiles; elemental semiconductors; indium; integrated circuit measurement; integrated circuit modelling; ion implantation; nitrogen; silicon; NMOS devices; Si:B,In,N; boron dopant; device behavior; dopant activation; dopant deactivation; electrically active dopants; gate oxide growth control; indium dopant; lowest-empty molecular orbitals; model silicon lattice system; n-channel CMOS devices; nitrogen effects; nitrogen pre-gate implants; quantum chemical study; relative electrical activity; retrograde indium channels; top-filled molecular orbitals; Boron; Chemicals; Implants; Indium; Interface states; Large scale integration; MOS devices; Nitrogen; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871232

Filename

871232