Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures

Author

Boroumand, F.A. ; Khalid, A.H. ; Hopkinson, M. ; Swanson, J.G.

Author_Institution

King´´s Coll., London, UK

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

51

Lastpage

54

Abstract

Comparisons have been made of the frequency dependence of the backgate admittance of GaAs structures prepared by MBE on undoped buffer layers prepared at high and low temperatures and of ion implanted structures. A model is offered to explain extra capacitive currents at low frequencies. Inductive and negative resistance behaviours which appear to be related have not been explained. None of these phenomena were apparent in the LT based structures

Keywords

III-V semiconductors; electric admittance; gallium arsenide; ion implantation; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; GaAs; MBE; epitaxial buffer layers; epitaxy; ion implantation; isolated GaAs structures; low frequency admittance; Admittance; Annealing; Buffer layers; Frequency dependence; Gallium arsenide; Ion implantation; MESFETs; Molecular beam epitaxial growth; Temperature dependence; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570876

Filename

570876